Influence of the gamma irradiation on photoluminescence properties of DGMA doped with Eu3+-β-diketonate complex

Diaquatris(thenoyltrifluoroacetonate) europium(III) at 1% were doped in diglycidylmetacrylic resin (DGMA) and films were obtained in an PMMA matrix. Their luminescent properties, in the solid state are discussed. These systems were characterized by elemental analysis, thermogravimetry (TGA) and infrared spectroscopy (FTIR). Based on curve data, the thermal stability of DGMA:Eu(tta)3 doped system (where tta = thenoyltrifluoroacetonate) is similar to the polymer. The emission spectra of the Eu3+ complex doped in the DGMA recorded at 77 K exhibited the characteristic sharp bands arising from the 5D0 → 7F J transitions (J = 0-4) of Eu3+ ion. Films containing DGMA: 1%Eu(tta)3 system doped in PMMA matrix were prepared and irradiated at low dose of gamma radiation and showed a decreasing of luminescence intensity with increase of the radiation dose