Published January 1999 | Version v1
Journal article Metadata-only

New possibilities to control the metal-semiconductor phase transition in VO2

Creators

  • 1. Yinstitut Khyimyiyi poverkhnyi, Natsyional'na Akademyiya Nauk Ukrayini, Kyiv (Ukraine)

Description

The physical principle to efficiently control parameters of the metal - semiconductor phase transition in a certain part of the disperse system based on VO2 and polyethylene glycol is realized. It makes possible to provide a competitive coexistence of the semiconductor and metallic phases in the sufficiently wide (335-365 K) temperature range

Additional details

Additional titles

Original title (Ukrainian)
Novyi mozhlivostyi keruvannya fazovim perekhodom metal - napyivprovyidnik v dyioksidyi vanadyiyu

Publishing Information

Journal Title
Dopovyidyi Natsyional'noyi Akademyiyi Nauk Ukrayini
Journal Issue
no.1
Journal Page Range
p. 82-86
ISSN
1025-6415

INIS

Country of Publication
Ukraine
Country of Input or Organization
Ukraine
INIS RN
30015942
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
NMR SPECTRA; PHASE STUDIES; PHASE TRANSFORMATIONS; POLYETHYLENE GLYCOLS; SEMICONDUCTOR JUNCTIONS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; VANADIUM OXIDES
Descriptors DEC
CHALCOGENIDES; ORGANIC COMPOUNDS; ORGANIC POLYMERS; OXIDES; OXYGEN COMPOUNDS; POLYMERS; SPECTRA; TEMPERATURE RANGE; TRANSITION ELEMENT COMPOUNDS; VANADIUM COMPOUNDS