Comparison of radiation damage parameter values for the widely used semiconductor gamma detector materials in wide energy range

Number of displaced atoms (NDA) values for 3 different semiconductor detector materials (Ge, Si, and GaAs) was reviewed at 26 different primary energies emitted from 9 radiation sources (241Am, 133Ba, 109Cd, 57Co, 60Co, 137Cs, 152Eu, 55Fe and 153Gd) widely used in the literature. FLUKA Monte Carlo code was used to simulate interactions between X–gamma rays and semiconductor detector materials. Germanium has the highest average NDA value in the studied three semiconductors. - Highlights: • DPA values for 3 semiconductor materials were simulated by FLUKA Monte Carlo code. • Widely used 26 primary photon energies were preferred. • Numbers of displaced atoms (NDA) values versus energy were illustrated. • Germanium with the highest average NDA value was observed