Published August 15, 2017 | Version v1
Journal article Metadata-only

Frequency and electric field controllable photodevice: FYTRONIX device

Creators

  • 1. Department of Physics, Faculty of Science, Gazi University, Ankara (Turkey)
  • 2. Unit of Science and Technology, Faculty of Science, King Khalid University, Abha 61413 P.O. Box 9004 (Saudi Arabia)
  • 3. Research Center for Advanced Materials Science, King Khalid University, Abha 61413 P.O. Box 9004 (Saudi Arabia)
  • 4. Department of Chemistry, Faculty of Science, King Khalid University, Abha, 61413 P.O. Box 9004 (Saudi Arabia)
  • 5. Department of Materials Science and Nanotechnology Engineering, Abdullah Gül University, Kayseri (Turkey)
  • 6. Department of Physics, Faculty of Sciences, King Abdul Aziz University, Jeddah (Saudi Arabia)
  • 7. Department of Physics and Astronomy, College of Science, King Saud University, Riyadh (Saudi Arabia)
  • 8. Department of Physics, Faculty of Arts and Sciences, Firat University, 23169 Elazig (Turkey)

Description

Al/p-Si/BODIPY/Al diode was fabricated by forming BODIPY organic layer on p-Si having ohmic contact. The electrical and photoresponse properties of the prepared diode were investigated in detail. The current-voltage (I-V) measurements were performed under dark and various illumination intensities. It is observed that the photocurrent under illumination is higher than the dark current. The transient measurements indicate that the device exhibits both photodiode and photocapacitor behavior. We called this device as FYTRONIX device. The photoresponse behavior of the FYTRONIX device is controlled simultaneously by frequency and electric field. The FYRONIX device can be used as a photoresponse sensor in optoelectronic applications.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.physb.2017.05.046

Additional details

Identifiers

DOI
10.1016/j.physb.2017.05.046;
PII
S0921-4526(17)30272-7;

Publishing Information

Journal Title
Physica. B, Condensed Matter
Journal Volume
519
Journal Page Range
p. 53-58
ISSN
0921-4526
CODEN
PHYBE3

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
49103047
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
DARK CURRENT; ELECTRIC FIELDS; ILLUMINANCE; LAYERS; PHOTOCURRENTS; PHOTODIODES; P-TYPE CONDUCTORS; SILICON; THIN FILMS
Descriptors DEC
CURRENTS; ELECTRIC CURRENTS; ELEMENTS; FILMS; LEAKAGE CURRENT; MATERIALS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS; SEMIMETALS

Optional Information

Copyright
Copyright (c) 2017 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.