Trapping centers in undoped GaS layered single crystals

Nominally undoped p-GaS layered single crystals were grown using the Bridgman technique. Thermally stimulated current measurements in the temperature range 10–300 K were performed at a heating rate of 0.10 K/s. The analysis of the data revealed six trap levels at 0.05, 0.06, 0.12, 0.63, 0.71, and 0.75 eV. The calculations for these traps yielded 1.2×10^-21, 2.9×10^-23, 2.4×10^-21, 8.0×10^-9, 1.9×10^-9 and 4.3×10^-10 cm² for the capture cross sections and 1.6×10¹³, 5.0×10¹², 7.3×10¹², 1.2×10¹⁴, 8.9×10¹³ and 2.6×10¹³ cm^-3 for the concentrations, respectively.