Published June 2020 | Version v1
Journal article Metadata-only

Transport Properties of a GaAs/InGaAs/GaAs Quantum Well: Temperature, Magnetic Field and Many-body Effects

Creators

  • 1. University of Tran Dai Nghia,189-Nguyen Oanh Street, Go Vap District, Ho Chi Minh City (Viet Nam)
  • 2. University of Science, Vietnam National University Ho Chi Minh City, 227-Nguyen Van Cu Street, 5th District, Ho Chi Minh City (Viet Nam)
  • 3. Ho Chi Minh City University of Education, 280 An Duong Vuong Street, 5th District, Ho Chi Minh City (Viet Nam)

Description

We investigate the zero and finite temperature transport properties of a quasi-two dimensional electron gas in a GaAs/InGaAs/GaAs quantum well under a magnetic field, taking into account many-body effects via a local-field correction. We consider the surface roughness, roughness-induced piezoelectric, remote charged impurity and homogenous background charged impurity scattering. The effects of the quantum well width, carrier density, temperature and local-field correction on resistance ratio are investigated. We also consider the dependence of the total mobility on the multiple scattering effect. (author)

Additional details

Publishing Information

Journal Title
Communications in Physics
Journal Volume
30
Journal Issue
2
Series
Published by Vietnam Academy of Science and Technology
Journal Page Range
p. 1230132
ISSN
0868-3166

INIS

Country of Publication
Viet Nam
Country of Input or Organization
Viet Nam
INIS RN
52123778
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
CARRIER DENSITY; ELECTRICITY; MAGNETIC FIELDS; MAGNETORESISTANCE; MANY-BODY PROBLEM; MULTIPLE SCATTERING; PHYSICAL PROPERTIES; PIEZOELECTRICITY
Descriptors DEC
ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELECTRICITY; PHYSICAL PROPERTIES; SCATTERING

Optional Information

Notes
23 refs, 5 figs