Published May 14, 2012 | Version v1
Journal article

Temperature dependence of carrier spin polarization determined from current-induced domain wall motion in a Co/Ni nanowire

  • 1. Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-0011 (Japan)
  • 2. PRESTO, Japan Science and Technology Agency, 4-1-8 Honcho Kawaguchi, Saitama 322-0012 (Japan)
  • 3. Center for Spintronics Integrated Systems, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)
  • 4. Green Innovation Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501 (Japan)
  • 5. RENESAS Electronics Corporation, Sagamihara, Kanagawa 252-5298 (Japan)
  • 6. NEC Energy Device Ltd., 1120 Shimokuzawa, Chuo-ku, Sagamihara, Kanagawa 252-5298 (Japan)
  • 7. University of Electro-communications, Chofu, Tokyo 182-8585 (Japan)

Description

We have investigated the temperature dependence of the current-induced magnetic domain wall (DW) motion in a perpendicularly magnetized Co/Ni nanowire at various temperatures and with various applied currents. The carrier spin polarization was estimated from the measured domain wall velocity. We found that it decreased more with increasing temperature from 100 K to 530 K than the saturation magnetization did.

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
100
Journal Issue
20
Journal Page Range
p. 202407-202407.3
ISSN
0003-6951
CODEN
APPLAB

Optional Information

Notes
(c) 2012 American Institute of Physics