Published March 16, 1987
| Version v1
Journal article
Study of defects in silicon after low energy H+ implantation by DLTS measurements
- 1. Institute of Nuclear Chemistry and Technology, Warsaw (Poland)
- 2. Centre de Recherches Nucleaires, Strasbourg (France). Lab. PHASE
- 3. Uniwersytet Marii Curie-Sklodowskiej, Lublin (Poland). Inst. Fizyki
Description
The introduction and annealing of defect states in silicon implanted with H+ ions are studied by capacitance transient spectroscopy (DLTS) on Schottky barrier structures. Several of the observed defect levels can be correlated with those identified in electron-irradiated silicon. Passivation of the defect states by hydrogen atoms is observed after 200 0C annealing. A tentative interpretation of the observed level as deduced from the annealing process is proposed. (author)
Additional details
Publishing Information
- Journal Title
- Phys. Status Solidi A
- Journal Volume
- 100
- Journal Issue
- 1
- Series
- Phys. Status Solidi A.
- Journal Page Range
- 245-249
- ISSN
- 0031-8965
- CODEN
- PSSAB
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 18062978
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANNEALING; CAPACITANCE; CRYSTAL DEFECTS; DEPTH; ENERGY LEVELS; HYDROGEN; ION IMPLANTATION; KEV RANGE 10-100; PHYSICAL RADIATION EFFECTS; PROTON BEAMS; SCHOTTKY BARRIER DIODES; SILICON; TRANSIENTS; TRAPS
- Descriptors DEC
- BEAMS; CRYSTAL STRUCTURE; DIMENSIONS; ELECTRICAL PROPERTIES; ELEMENTS; ENERGY RANGE; HEAT TREATMENTS; KEV RANGE; NONMETALS; NUCLEON BEAMS; PARTICLE BEAMS; PHYSICAL PROPERTIES; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMIMETALS