Published 1990 | Version v1
Book

Photoluminescence studies of impurities and defects in mercuric iodide

  • 1. Carnegie Mellon Univ., Dept. of Electrical and Computer Engineering, Pittsburgh, PA (USA)
  • 2. Sandia National Lab., Advanced Materials Div., Livermore, CA (USA)
  • 3. EG and G Energy Instruments, Inc., Goleta, CA (USA)

Description

The authors have studied the effects of chemical etching in potassium iodide(KI) aqueous solution, vacuum exposure and bulk heating on the photoluminescence(PL) spectra of mercuric iodide(HgI2). Different contact materials deposited onto HgI2 were also investigated, such as Pd, Cu, Al, Ni, Sn, In, Ag and Ta. These processing steps and the choice of a suitable electrode material are very important in the manufacturing of high-quality mercuric iodide nuclear detectors. Comparisons are made between the front surface photoluminescence and transmission photoluminescence spectra

Additional details

Publishing Information

Publisher
Materials Research Society.
Imprint Place
Pittsburgh, PA (USA)
ISBN
1-55899-051-8
Imprint Title
Impurities, defects and diffusion in semiconductors
Imprint Pagination
1050 p.
Journal Page Range
p. 1027-1030.

Conference

Title
Materials Research Society fall meeting.
Dates
27 Nov - 2 Dec 1989.
Place
Boston, MA (USA).

Optional Information

Secondary number(s)
CONF-891119--.