The study of dopant transport in the doping process of epitaxial InAs layer by 4 group elements

Transfer of impurities from a source to gaseous phase and from gaseous phase to epitaxial layer in the process of InAs doping by group 4 elements (tin, germanium, lead), when epitaxial layers are produced in chloride-hydride system, was studied experimentally. It is ascertained that when InAs is doped by germanium and tin from a mixed source, concentration of electrons in the layers increases with the source temperature decrease and growth temperature increase. It is found that the impurities are included in the layer in electrically active form. It is detected that InAs layers doped by lead have electronic type of conductivity, however, lead concentration in the layers is much higher than electron concentration