Published December 1989
| Version v1
Journal article
CMOS VLSI single event transient characterization
- 1. Univ. of Florida, FL (USA)
- 2. Los Alamas, National Lab. (USA)
Description
This paper reports single-event upset (SEU) transient measurements made on test structures developed using the MOSIS IC fabrication service. Three test structures were designed for a CMOS p-well 3μ process, including two MOS diodes for SEU transient measurements. Devices were irradiated with 5 MeV boron ions 5 MeV α particles
Additional details
Publishing Information
- Journal Title
- IEEE Transactions on Nuclear Science
- Journal Volume
- 36
- Journal Issue
- 6
- Series
- IEEE Trans. Nucl. Sci.
- Journal Page Range
- 2287-2291
- ISSN
- 0018-9499
- CODEN
- IETNA
Conference
- Title
- 26. annual conference on nuclear and space radiation effects.
- Dates
- 25-29 Jul 1989.
- Place
- Marco Island, FL (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 21059560
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S36: MATERIALS SCIENCE; S42: ENGINEERING;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALPHA PARTICLES; BORON IONS; FABRICATION; INTEGRATED CIRCUITS; IRRADIATION; MEV RANGE; MOS TRANSISTORS; P-TYPE CONDUCTORS; RADIATION HARDENING; SEMICONDUCTOR DIODES; SILICON; SPECIFICATIONS; TRANSIENTS
- Descriptors DEC
- ATOMIC IONS; CHARGED PARTICLES; ELECTRONIC CIRCUITS; ELEMENTS; ENERGY RANGE; HARDENING; HELIUM IONS; IONIZING RADIATIONS; IONS; MATERIALS; PHYSICAL RADIATION EFFECTS; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SEMIMETALS; TRANSISTORS
Optional Information
- Secondary number(s)
- CONF-890723--.