Additive recovery at lateral boundaries of grains under electronic exposure

The experimental investigation of additive re-distribution under electronic beam revealed a recovery of the additive at grain boundaries. Additive accumulation mainly takes place at the boundaries that are perpendicular to material surface, whereas there is no an observed recovery of additive at the boundaries that are parallel to the surface. To construe the processes of additive recovery at grain boundaries, we may use the kinetic diffusion equation describing the mass transfer processes in the presence of temperature gradients and non-equilibrium vacancies. The additive recovery is caused by spot fault gradients near the grain boundary. The grain boundary is an intensive run-off region of vacancies. Therefore, the average vacancy distribution profile near the grain boundary changes its pattern. The above case indicates that there are two additive fluxes. One of them is vectored perpendicular to the surface, and the other one is parallel to it, i.e. it is vectored to the grain boundary. A study of the perpendicular and parallel boundaries shows that there is no additive settling at the boundaries that are parallel to the surface, since the general flux is vectored to the parallel boundaries. There is no such kind of phenomenon at the grain boundaries that are perpendicular to the surface. Besides, the perpendicular boundaries are more effective run-off regions for vacancies, since there is a slower build-up of the region with vacancies due to displacement of the vacancies to the surface