Synthesis of CuO–graphene nanocomposite material and the effect of gamma radiation on CuO–graphene/p-Si junction diode

Here, we introduce high-quality CuO–Graphene nanocomposite synthesis by hydrothermal method and used it as the interfacial layer to investigate radiation resistance in metal/interlayer/semiconductor (MIS) junction diode structure. In order to determine the effect of the nanocomposite layer on the electrical characteristics of Al/CuO–Graphene/p-Si/Al MIS junction diode, the current–voltage (I–V) measurements were performed at room temperature. The main electrical parameters of the junctions such as ideality factor (n), barrier height (Φ_b) were calculated using the thermionic emission (TE) theory and the results were compared with reference Schottky Diode (SD). The Φ_b and n values were calculated as 0.70 eV, 1.93 and 0.72 eV, 1.75 for reference SD and CuO–Graphene/p-Si MIS junction, respectively. The n value of the device reduced in the presence of the nanocomposite layer between the metal and the semiconductor. In addition, the Φ_b and series resistance (R_s) parameters were calculated from I–V measurements using Norde functions and the results were compared with the TE method. Furthermore, to determine the radiation tolerance property of the devices, gamma radiation was applied and the electrical parameters were evaluated for unirradiated and irradiated cases. The results showed that the fabricated devices may have various applications; thanks to radiation tolerance property. To the best of our knowledge, there is no research available regarding the exposure of CuO–Graphene thin films to gamma-ray irradiation studied using the I–V technique. Therefore, we believe that this study can make an important contribution to the literature.