Published November 2005
| Version v1
Journal article
Design of low noise CMOS charge sensitive amplifier ASIC
Creators
- 1. Tsinghua Univ., Beijing (China). Dept. of Engineering Physics
Description
The number of channel of front-end electronics has been increasing rapidly in recent applications of radiation detection, requiring more and more integrated circuit. How to implement nuclear electronics with high-density, low-cost and high performance and reliability has become a critical issue. Due to its low cost and capability for custom design, CMOS ASIC technology is being the working horse for monolithic nuclear electronics. The authors have designed low noise CMOS charge sensitive amplifiers for first run prototyping using CSMC 0.6 μm CMOS process. (authors)
Additional details
Publishing Information
- Journal Title
- Nuclear Electronics and Detection Technology
- Journal Volume
- 25
- Journal Issue
- 6
- Journal Page Range
- p. 678-681
- ISSN
- 0258-0934
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 37113391
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- COST; DESIGN; ELECTRIC CHARGES; INTEGRATED CIRCUITS; MOS TRANSISTORS; NOISE; PREAMPLIFIERS; SENSITIVITY
- Descriptors DEC
- AMPLIFIERS; ELECTRONIC CIRCUITS; ELECTRONIC EQUIPMENT; EQUIPMENT; MICROELECTRONIC CIRCUITS; SEMICONDUCTOR DEVICES; TRANSISTORS
Optional Information
- Notes
- 4 figs., 1 tab., 5 refs.