Published 1976 | Version v1
Report

Channeling and coherent bremsstrahlung effects for relativistic positrons and electrons

Description

Channeling of positrons in single crystals of silicon has been observed in transmission and scattering measurements for incident energies from 16 to 23 MeV. In addition, the spectral dependence upon crystal orientation of the forward coherent bremsstrahlung produced by beams of 23 MeV positrons and electrons incident upon a 5 μm thick single crystal of silicon was measured with a NaI photon spectrometer. Effects of channeling and perhaps of the non-validity of the first Born approximation were observed for beam directions near the <111> axis of the crystal, and coherent peaks near 0.5 MeV were observed for a compound interference direction, in agreement with first-order theoretical calculations

Availability note (English)

University Microfilms Order No. 77-6365.

Additional details

Additional titles

Augmented title (English)
16 to 23 MeV

Publishing Information

Imprint Pagination
83 p.

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
9362553
Subject category
S36: MATERIALS SCIENCE; S73: NUCLEAR PHYSICS AND RADIATION PHYSICS;
Resource subtype / Literary indicator
Thesis, Non-conventional Literature
Descriptors DEI
MEV RANGE 10-100; MONOCRYSTALS; POSITRON CHANNELING; SILICON
Descriptors DEC
CHANNELING; CRYSTALS; ELEMENTS; ENERGY RANGE; MEV RANGE; SEMIMETALS