Published February 9, 2009
| Version v1
Journal article
Self-assembled GaN hexagonal micropyramid and microdisk
- 1. Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan (China)
Description
The self-assembled GaN hexagonal micropyramid and microdisk were grown on LiAlO2 by plasma-assisted molecular-beam epitaxy. It was found that the (0001) disk was established with the capture of N atoms by most-outside Ga atoms as the (1x1) surface was constructing, while the pyramid was obtained due to the missing of most-outside N atoms. The intensity of cathode luminescence excited from the microdisk was one order of amplitude greater than that from M-plane GaN
Additional details
Identifiers
- DOI
- 10.1063/1.3079078;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 94
- Journal Issue
- 6
- Journal Page Range
- p. 062105-062105.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40051335
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CATHODES; CATHODOLUMINESCENCE; CRYSTAL GROWTH; GALLIUM NITRIDES; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- CRYSTAL GROWTH METHODS; ELECTRODES; EMISSION; EPITAXY; GALLIUM COMPOUNDS; LUMINESCENCE; MATERIALS; NITRIDES; NITROGEN COMPOUNDS; PHOTON EMISSION; PNICTIDES
Optional Information
- Notes
- (c) 2009 American Institute of Physics