Published 1993 | Version v1
Miscellaneous

The effect of electron irradiation on Pb S thin films for IR detectors

  • 1. Institute for Physics and Technology of Materials, Bucharest, P.O.Box MG-6, (Romania)
  • 2. Institute for Physics and Technology of Radiation Devices, Bucharest, P.O.Box MG-6, (Romania)
  • 3. Faculty of Physics, University of Craiova, Craiova, (Romania)

Description

In this paper the effect of electron irradiation of Pb S thin films for IR detectors is being investigated. Pb S thin films are obtained by chemical precipitation on a glass substrate. The samples were subjected to irradiation with 7 MeV electrons supplied by an electron linear accelerator. Comparative measurements on IR irradiation devices have been performed both at the room and the liquid nitrogen temperature. In the latter case, improvements of some electro-optical parameters (signal/noise ratio, time of response, and so on) have been obtained. (Author)

Part of:
National Physics Conference

Additional details

Publishing Information

Publisher
Institute of Atomic Physics. Information and Documentation Office.
Imprint Place
Bucharest (Romania)
Imprint Title
National Physics Conference
Imprint Pagination
160 p.
Journal Page Range
p. 67.

Conference

Title
National Physics Conference.
Dates
13-15 Oct 1993.
Place
Constanta (Romania).

Optional Information