Doctor-bladed Cu2ZnSnS4 light absorption layer for low-cost solar cell application
- 1. Department of Physics, Shanghai Jiao Tong University, Shanghai 200240 (China)
- 2. School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093 (China)
Description
The doctor-blade method is investigated for the preparation of Cu2ZnSnS4 films for low-cost solar cell application. Cu2ZnSnS4 precursor powder, the main raw material for the doctor-blade paste, is synthesized by a simple ball-milling process. The doctor-bladed Cu2ZnSnS4 films are annealed in N2 ambient under various conditions and characterized by X-ray diffraction, ultraviolent/vis spectrophotometry, scanning electron microscopy, and current-voltage (J—V) meansurement. Our experimental results indicate that (i) the X-ray diffraction peaks of the Cu2ZnSnS4 precursor powder each show a red shift of about 0.4°; (ii) the high-temperature annealing process can effectively improve the crystallinity of the doctor-bladed Cu2ZnSnS4, whereas an overlong annealing introduces defects; (iii) the band gap value of the doctor-bladed Cu2ZnSnS4 is around 1.41 eV; (iv) the short-circuit current density, the open-circuit voltage, the fill factor, and the efficiency of the best Cu2ZnSnS4 solar cell obtained with the superstrate structure of fluorine-doped tin oxide glass/TiO2/In2S3/Cu2ZnSnS4/Mo are 7.82 mA/cm2, 240 mV, 0.29, and 0.55%, respectively. (interdisciplinary physics and related areas of science and technology)
Availability note (English)
Available from http://dx.doi.org/10.1088/1674-1056/21/3/038401Additional details
Identifiers
Publishing Information
- Journal Title
- Chinese Physics. B
- Journal Volume
- 21
- Journal Issue
- 3
- Journal Page Range
- [7 p.]
- ISSN
- 1674-1056
INIS
- Country of Publication
- China
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45026570
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANNEALING; COPPER COMPOUNDS; CURRENT DENSITY; DOPED MATERIALS; ELECTRIC POTENTIAL; EV RANGE; FILL FACTORS; INDIUM SULFIDES; LAYERS; POWDERS; RAW MATERIALS; SCANNING ELECTRON MICROSCOPY; SOLAR CELLS; SPECTROPHOTOMETRY; TIN OXIDES; TITANIUM OXIDES; X-RAY DIFFRACTION
- Descriptors DEC
- CHALCOGENIDES; COHERENT SCATTERING; DIFFRACTION; DIMENSIONLESS NUMBERS; DIRECT ENERGY CONVERTERS; ELECTRON MICROSCOPY; ENERGY RANGE; EQUIPMENT; HEAT TREATMENTS; INDIUM COMPOUNDS; MATERIALS; MICROSCOPY; OXIDES; OXYGEN COMPOUNDS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; SCATTERING; SOLAR EQUIPMENT; SULFIDES; SULFUR COMPOUNDS; TIN COMPOUNDS; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS