Study of the formation of titanium nitride layers under low-energy nitrogen ion implantation into titanium

The process of titanium nitride layer formation under low-energy (5 keV) implantation of nitrogen ions to titanium is investigated. The study of chemical states of atoms and determination of TixNy-Ti structure element composition are realized using electron Auger spectroscopy and X-ray photoelectron spectroscopy methods. It is shown that the shapes of titanium Auger-lines are modified with oxygen concentration increase. The results obtained have demonstrated a possibility of creating homogeneous subthin titanium nitride layers which practically do not contain oxygen impurities and can be perspectively used in modern microelectron devices