Published 2020 | Version v1
Book Metadata-only

Study of NiSi2/Si surface morphology by means of SEM and AFM

Creators

  • 1. Karshinskij Gosudarstvennyj Univ., Karshi (Uzbekistan)
  • 2. Tashkentskij Gosudarstvennyj Tekhnicheskij Univ., Tashkent (Uzbekistan)

Description

The formation of epitaxial layers of NiSi2 at Ni deposition on Si and subsequent annealing is studied by means of Auger electron spectroscopy, scanning electron microscopy and atomic force microscopy. It is found that the morphology of films has the island character at thickness h ≤ 150 Å

Abstract (Russian)

В данной работе методами оже-электронной спектроскопии, растровой электронной и атомно-силовой микроскопии изучено формирование эпитаксиальных слоев NiSi2 при осаждении Ni в Si с последующим отжигом. Установлено, что при толщинах h ≤ 150 Å пленки имеют островковый характер
Part of:
VI International conference «Laser, plasma research and technologies – LaPlaz-2020». Collection of scientific papers. Part 2

Additional details

Additional titles

Original title (Russian)
Изучение морфологии поверхности NiSi<суб>2</суб>/Си с испол&апос;зованием методов REhM и ASM

Publishing Information

Publisher
NIYaU MIFI
Imprint Place
Moscow (Russian Federation)
ISBN
978-5-7262-2655-2
Imprint Title
VI International conference #Left-Pointing Double Angle Quotation Mark#Laser, plasma research and technologies #En Dash# LaPlaz-2020#Right-Pointing Double Angle Quotation Mark#. Collection of scientific papers. Part 2
Imprint Pagination
370 p.
Journal Page Range
p. 92-93

Conference

Title
6. International conference ''Laser, plasma research and technologies - LaPlaz-2020''
Original Conference Title
VI Mezhdunarodnaya konferentsiya «Lazernye, plazmennye issledovaniya i tekhnologii – LaPlaz-2020»
Dates
11-14 Feb 2020
Place
Moscow (Russian Federation)

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
53110933
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference, Numerical Data
Descriptors DEI
ANNEALING; ATOMIC FORCE MICROSCOPY; EPITAXY; EXPERIMENTAL DATA; IMAGES; MORPHOLOGY; NICKEL SILICIDES; SCANNING TUNNELING MICROSCOPY; SURFACE PROPERTIES; THICKNESS; THIN FILMS
Descriptors DEC
CRYSTAL GROWTH METHODS; DATA; DIMENSIONS; FILMS; HEAT TREATMENTS; INFORMATION; MICROSCOPY; NICKEL COMPOUNDS; NUMERICAL DATA; SILICIDES; SILICON COMPOUNDS; TRANSITION ELEMENT COMPOUNDS

Optional Information

Notes
1 fig. Imprint:VI Mezhdunarodnaya konferentsiya #Left-Pointing Double Angle Quotation Mark#Lazernye, plazmennye issledovaniya i tekhnologii #En Dash# LaPlaz-2020#Right-Pointing Double Angle Quotation Mark#. Sbornik nauchnykh trudov. Chast' 2