Published May 7, 2006 | Version v1
Journal article

Lifetime shortening in doped ZnS nanophosphors

  • 1. Department of Physics, Punjabi University, Patiala-147 002 (India)
  • 2. Institute of Engineering and Emerging Technologies, Baddi, Solan-173 205 (India)
  • 3. SPMS, Thapar Institute of Engineering and Technology, Patiala-147 004 (India)
  • 4. Defence Laboratory, Jodhpur 342 011 (India)

Description

ZnS : Mn nanophosphor has been doped with quencher impurity Ni using the colloidal precipitation method with capping agent polyvinylpyrrolidone. The formation of ∼2.5 nm sized nanoparticles has been confirmed by x-ray diffraction and transmission electron microscope studies. Energy and time resolved photoluminescence spectra of the synthesized nanophosphors have been studied at room temperature. Photoluminescent spectra for ZnS : Mn, Ni show three peaks at 412 nm, 433 nm and 590 nm corresponding to Ni impurity, sulphide vacancies (Vs) and Mn impurity, respectively. The ZnS : Mn nanophosphor show typical nanosecond lifetimes for defect-related emission and millisecond lifetimes for Mn impurity-related emission. However, the ZnS : Mn, Ni samples showed lifetime shortening, with variation of dopant concentration for defect-related (420 nm) as well as impurity-related emission (590 nm), which is attributed to exchange interaction between Mn2+ and nearest neighbour Ni2+ impurities

Availability note (English)

Available online at http://stacks.iop.org/0022-3727/39/1754/d6_9_008.pdf or at the Web site for the Journal of Physics. D, Applied Physics (ISSN 1361-6463) http://www.iop.org/

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Physics. D, Applied Physics
Journal Volume
39
Journal Issue
9
Journal Page Range
p. 1754-1760
ISSN
0022-3727
CODEN
JPAPBE