Published March 1984 | Version v1
Book Metadata-only

RBS analysis of the reaction of the Ni-Si system induced by electron beam annealing

Creators

  • 1. Hosei Univ., Tokyo (Japan)

Description

no abstract available

Additional details

Publishing Information

Publisher
Hosei Univ.
Imprint Place
Tokyo (Japan)
Imprint Title
Report of Research Center of Ion Beam Technology, Hosei University, supplement 3, March 1984
Imprint Pagination
182 p.
Journal Page Range
p. 43-46.

Conference

Title
2. symposium on ion beam technology, Hosei University; ion beam analysis.
Dates
2-3 Dec 1983.
Place
Tokyo (Japan).

INIS

Country of Publication
Japan
Country of Input or Organization
Japan
INIS RN
16062298
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference, No Abstract
Descriptors DEI
ANNEALING; BACKSCATTERING; DEPOSITION; ELECTRON BEAMS; ELECTRON DIFFRACTION; EPITAXY; FILMS; NICKEL; NICKEL SILICIDES; RUTHERFORD SCATTERING; SILICON; THICKNESS
Descriptors DEC
BEAMS; COHERENT SCATTERING; DIFFRACTION; DIMENSIONS; ELASTIC SCATTERING; ELEMENTS; HEAT TREATMENTS; LEPTON BEAMS; METALS; NICKEL COMPOUNDS; PARTICLE BEAMS; SCATTERING; SEMIMETALS; SILICIDES; SILICON COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS

Optional Information

Notes
Published in summary form only.