Published December 15, 2009
| Version v1
Journal article
Long-term room-temperature relaxation of the defects induced in (Hg,Cd)Te by low-energy ions
Creators
- 1. R and D Institute for Materials SRC 'Carat', 202 Stryjska Street, Lviv 79031 (Ukraine)
- 2. Ioffe Physical-Technical Institute of the Russian Academy of Sciences, St. Petersburg 194021 (Russian Federation)
- 3. Institute of Physics, Rzeszow University, 16A Rejtana Street, Rzeszow 35-310 (Poland)
- 4. Tomsk State University, 36 Lenin Avenue, Tomsk 634050 (Russian Federation)
- 5. Peter the Great Academy of the Strategic Missile Force, Moscow 109074 (Russian Federation)
Description
The results of the study of relaxation of defects induced in (Hg,Cd)Te by low-energy ions are reported. The treatment was applied to bulk crystals and epitaxial films grown by liquid phase and molecular beam epitaxy. Room-temperature relaxation of defects in the In-, Se-, and vacancy-doped material has been studied. The mechanisms of the formation and relaxation of the defects and their implications to the technology of (Hg,Cd)Te, one of the basic materials for infrared optoelectronics, are considered.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.physb.2009.08.217Additional details
Identifiers
- DOI
- 10.1016/j.physb.2009.08.217;
- PII
- S0921-4526(09)00997-1;
Publishing Information
- Journal Title
- Physica. B, Condensed Matter
- Journal Volume
- 404
- Journal Issue
- 23-24
- Journal Page Range
- p. 5025-5027
- ISSN
- 0921-4526
- CODEN
- PHYBE3
Conference
- Title
- 25. international conference on defects in semiconductors
- Dates
- 20-24 Jul 2009
- Place
- St. Petersburg (Russian Federation)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41089724
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CADMIUM COMPOUNDS; CRYSTAL DEFECTS; DOPED MATERIALS; FILMS; ION BEAMS; IONS; MERCURY COMPOUNDS; MOLECULAR BEAM EPITAXY; PHYSICAL RADIATION EFFECTS; RELAXATION; TELLURIUM COMPOUNDS; TEMPERATURE RANGE 0273-0400 K; VACANCIES
- Descriptors DEC
- BEAMS; CHARGED PARTICLES; CRYSTAL DEFECTS; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; EPITAXY; MATERIALS; POINT DEFECTS; RADIATION EFFECTS; TEMPERATURE RANGE
Optional Information
- Copyright
- Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.