Radiation characterization of a C256 EEPROM

Total dose, dose-rate and high dose-rate memory retention results are presented for the SEEQ Technologies Inc., 28C256 floating gate electrically erasable programmable read only memory (EEPROM). Total dose failure levels are mode dependent, i.e. ∼33 krad(Si) for reading and ∼9.5 krad(Si) for writing. The write-mode failure level is dose-rated dependent, increasing from ∼10 krad(Si) at ∼11 rad(Si)/s to ∼ 28 krad(Si) at dose rates ∼0,1 rad(Si)/s Average upset and latch-up thresholds are 3.8 x 108 rad(Si)/s and 7.7 x 108 rad(Si)/s respectively. No latch-up windows were observed. Memory contents were retained following exposure up to 108 krad (Si) and following 1 x 1012 rad(Si)/s