The role of point defects on defect production in β-SiC

Cubic polytype of Silicon Carbide (β-SiC) is a prospective material for use as a structural and cladding material in the next generation fusion and fission reactors because of its high thermal conductivity, high strength and low chemical reactivity. Molecular dynamics (MD) simulations of displacement cascades on single and nano-crystalline β-SiC have rendered significant insights into the defect production and also on the interaction of the cascades with grains and grain boundaries[2,3,4]. Most of these MD simulations have been carried out on samples without pre-existing point defects. While the first cascade may occur in the absence of any significant point defect concentration. (Author)