Published January 2005
| Version v1
Journal article
Efficient near-infrared photoluminescence from layers of gallium nitride doped by arsenic
Creators
- 1. RAN, Fiziko-Tekhnicheskij Inst. im. A.F. Ioffe, Sankt-Peterburg (Russian Federation)
- 2. Fizicheskij Fakul'tet, Fakul'tet Ehlektricheskoj Inzhenerii Univ. Nottingem, Nottingem (United Kingdom)
Description
Photoluminescence in the 1.2-1.4 eV spectral range from the GaN:As layers grown on (0001) Al2O3 substrates has been discovered and studied. The photoluminescence is attributed to radiative recombination in GaAs nanocrystallites self-organized in the GaN matrix during the growth process. The photoluminescence intensity reaches a maximum under the growth temperature of ∼ 780 deg C. Photoluminescence excitation spectra demonstrate features. which correspond to the resonant formation of free and bound excitons as well as the formation of excitons with simultaneous emission of optical phonons
Abstract (Russian)
Обнаружена и исследована фотолюминесценция в диапазоне 1.2-1.4 эВ в слоях GaN:As, выращенных на подложках (0001) Al2O3. Фотолюминесценция обусловлена излучательной рекомбинацией в нанокристаллитах GaAs, самоорганиующихся в матрице GaN в процессе роста. Интенсивность фотолюминесценции максимальна при температуре роста ∼ 780 град С. В спектрах возбуждения фотолюминесценции наблюдаются особенности, относящиеся к резонансному возбуждению свободных и связанных экситонов, а также к возбуждению экситонов с одновременным испусканием оптических фононовAdditional details
Additional titles
- Original title (Russian)
- Эффективная фотолюминесценция ближнего инфракрасного диапазона в слоях нитрида галлия, легированного мышьяком
Publishing Information
- Journal Title
- Fizika i Tekhnika Poluprovodnikov
- Journal Volume
- 39
- Journal Issue
- 1
- Journal Page Range
- p. 82-86
- ISSN
- 0015-3222
- CODEN
- FTPPA4
Conference
- Title
- Nanophotonics-2004
- Original Conference Title
- Soveshchanie: Nanofotonika-2004
- Acronym
- Conference
- Dates
- 2-6 May 2004
- Place
- Nizhnij Novgorod (Russian Federation)
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 37104073
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ARSENIC ADDITIONS; EMISSION SPECTRA; EXCITONS; GALLIUM NITRIDES; INFRARED RADIATION; MOLECULAR BEAM EPITAXY; NANOSTRUCTURES; PHONONS; PHOTOLUMINESCENCE; RECOMBINATION; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0013-0065 K; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K
- Descriptors DEC
- ALLOYS; ARSENIC ALLOYS; CRYSTAL GROWTH METHODS; ELECTROMAGNETIC RADIATION; EMISSION; EPITAXY; GALLIUM COMPOUNDS; LUMINESCENCE; NITRIDES; NITROGEN COMPOUNDS; PHOTON EMISSION; PNICTIDES; QUASI PARTICLES; RADIATIONS; SPECTRA; TEMPERATURE RANGE
Optional Information
- Notes
- 17 refs., 5 figs.