Published November 2019 | Version v1
Journal article

Tunable spin-polarized transport through a side-gated double quantum dot molecular junction in the Coulomb blockade regime

  • 1. Soochow University, School of Physical Science and Technology (China)
  • 2. Concordia University, Department of Physics (Canada)
  • 3. Changshu Institute of Technology, College of Physics and Electronic Engineering (China)

Description

Based on nonequilibrium Green's function method, we investigate spin-polarized transport properties of a side-gated double quantum dot (DQD) system in the Coulomb blockade regime under a magnetic field and an electric or thermal bias. The charge and spin currents oscillate frequently and can change sign upon varying gate voltage VG if the electric bias is spin–dependent. Under a thermal bias, besides the charge- and spin-current oscillations with VG, a pure spin current appears at the electron–hole symmetry point. Importantly, its sign can be controlled by the magnetic field above a "critical" strength. In addition, the charge- and spin-Seebeck coefficients oscillate nontrivially depending on VG, B, and the tunnel coupling. Finally, we also study the spin-polarized transport properties of the DQD system effects under simultaneously applying an electric and a thermal bias.

Additional details

Identifiers

Publishing Information

Journal Title
Applied Nanoscience (Heidelberg. Internet)
Journal Volume
9
Journal Issue
8
Journal Page Range
p. 1685-1693
ISSN
2190-5517

INIS

Country of Publication
Germany
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
54075175
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
ELECTRIC POTENTIAL; ELECTRONS; MAGNETIC FIELDS; QUANTUM DOTS; SPIN; SPIN ORIENTATION; SYMMETRY
Descriptors DEC
ANGULAR MOMENTUM; ELEMENTARY PARTICLES; FERMIONS; LEPTONS; NANOSTRUCTURES; ORIENTATION; PARTICLE PROPERTIES

Optional Information

Copyright
Copyright (c) 2019 King Abdulaziz City for Science and Technology