Published July 2012 | Version v1
Journal article

Permittivity and its temperature dependence in hexagonal structure BN dominated by the local electric field

  • 1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)
  • 2. Aerospace Research Institutes of Materials and Processing Technology, Beijing 100076 (China)

Description

This paper presents an analysis of the local electric field in hexagonal boron nitride (h-BN) by introducing a modified parameter. Based on the determination of the modified parameter of h-BN, the revised Lorenz equation is developed. Then the permittivity at high temperature and in the microwave frequency is investigated. In addition, this equation is derived for evaluating the temperature coefficient of the permittivity of h-BN. The analyses show that the permittivity increases with increasing temperature, which is mainly attributed to the positive temperature coefficient of the ionic polarizability. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-1056/21/7/077701

Additional details

Publishing Information

Journal Title
Chinese Physics. B
Journal Volume
21
Journal Issue
7
Journal Page Range
[8 p.]
ISSN
1674-1056