On the low-temperature heteroepitaxy of cubic silicon carbide with methyl silane

In the present thesis for the firat time a low-temperature LPVCD process with methyl silane as precursor gas was developed, which corresponds concerning crystal quality and electric properties of the fabricated silicon carbine layers to the state of technique. Because of the by 160 C lower process temperature this process represents a further development in the SiC epitaxy. The SiC quality in dependence on the applied process parameters and the growth processes of the layer were systematically studied by numerous characterization methods like X-ray, REM, TEM< AFM, Hall, Raman, and PDS. Numerous aspects of the growth could be explained. Of fundamental importance was the development of a fast carbonization step with an ethylene/argon mixture, in order to fabricate with this low- temperature process high-quality SiC. The carbonization layer is crystalline, 7 nm thin and closed and avoids especially in the silicon substrate the otherwise during the carbonization phase growing cavities