Published March 2021 | Version v1
Journal article

Optimization of the thermometric performance of single band ratiometric luminescent thermometer based on Tb3+ luminescence by the enhancement of thermal quenching of GSA-excited luminescence in TZPN glass

  • 1. Institute of Low Temperature and Structure Research, Polish Academy of Sciences, Okólna 2, Wrocław, 50-422 (Poland)

Description

Highlights: • TZPN glasses doped with Tb3+ ions were applied to luminescence thermometry. • Excitation lines matching GSA and ESA allowed for SBR approach to be applied. • The observed rapid thermal quenching of GSA-excited luminescence was discussed. • Optimizing the GSA-excited emission allowed to achieve high sensitivities. -- Abstract: Responding to the latest trends in luminescence thermometry, a new material of TZPN glass doped with Tb3+ ions was investigated for its use in the single band ratiometric approach. In contrast to the most of the Tb3+ doped phosphors emission intensity of Tb3+ ions in TZPN glass upon excitation matched to transitions from the ground 7F6 level show strong thermal quenching of luminescence intensity. On the other hand for an excitation line matched to the absorption from the thermally coupled excited 7F5 level, the emission intensity increases for temperature elevation. The ratio of these two signals is known to be an excellent temperature dependent parameter enabling a highly sensitive temperature readout. Strong thermal quenching of Tb3+ emission was discussed in terms of the thermally induced electron transfer from f state to the conduction band of the glass. In this work, it has been shown that optimization of the thermal quenching process is as important as the previously proposed optimizations of the intensity variability upon stimulation matched to excited state absorption. High relative sensitivities reaching 1–2%/°C were achieved, mainly because of the strong thermal quenching of the luminescence exhibited by the TZPN: Tb3+ glasses with different concentrations of dopant ions.

Additional details

Identifiers

DOI
10.1016/j.jallcom.2020.157690;
PII
S0925838820340548;

Publishing Information

Journal Title
Journal of Alloys and Compounds
Journal Volume
858
Journal Page Range
vp.
ISSN
0925-8388
CODEN
JALCEU

INIS

Country of Publication
Switzerland
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
55000928
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
DOPED MATERIALS; ELECTRON TRANSFER; EXCITATION; EXCITED STATES; F STATES; GLASS; LUMINESCENCE; QUENCHING; SENSITIVITY; SULFUR IONS; TEMPERATURE DEPENDENCE; TERBIUM IONS
Descriptors DEC
CHARGED PARTICLES; EMISSION; ENERGY LEVELS; ENERGY-LEVEL TRANSITIONS; IONS; MATERIALS; PHOTON EMISSION

Optional Information

Copyright
Copyright (c) 2020 Elsevier B.V. All rights reserved.