Optimization of the thermometric performance of single band ratiometric luminescent thermometer based on Tb3+ luminescence by the enhancement of thermal quenching of GSA-excited luminescence in TZPN glass
- 1. Institute of Low Temperature and Structure Research, Polish Academy of Sciences, Okólna 2, Wrocław, 50-422 (Poland)
Description
Highlights: • TZPN glasses doped with Tb3+ ions were applied to luminescence thermometry. • Excitation lines matching GSA and ESA allowed for SBR approach to be applied. • The observed rapid thermal quenching of GSA-excited luminescence was discussed. • Optimizing the GSA-excited emission allowed to achieve high sensitivities. -- Abstract: Responding to the latest trends in luminescence thermometry, a new material of TZPN glass doped with Tb3+ ions was investigated for its use in the single band ratiometric approach. In contrast to the most of the Tb3+ doped phosphors emission intensity of Tb3+ ions in TZPN glass upon excitation matched to transitions from the ground 7F6 level show strong thermal quenching of luminescence intensity. On the other hand for an excitation line matched to the absorption from the thermally coupled excited 7F5 level, the emission intensity increases for temperature elevation. The ratio of these two signals is known to be an excellent temperature dependent parameter enabling a highly sensitive temperature readout. Strong thermal quenching of Tb3+ emission was discussed in terms of the thermally induced electron transfer from f state to the conduction band of the glass. In this work, it has been shown that optimization of the thermal quenching process is as important as the previously proposed optimizations of the intensity variability upon stimulation matched to excited state absorption. High relative sensitivities reaching 1–2%/°C were achieved, mainly because of the strong thermal quenching of the luminescence exhibited by the TZPN: Tb3+ glasses with different concentrations of dopant ions.
Additional details
Identifiers
- DOI
- 10.1016/j.jallcom.2020.157690;
- PII
- S0925838820340548;
Publishing Information
- Journal Title
- Journal of Alloys and Compounds
- Journal Volume
- 858
- Journal Page Range
- vp.
- ISSN
- 0925-8388
- CODEN
- JALCEU
INIS
- Country of Publication
- Switzerland
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 55000928
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- DOPED MATERIALS; ELECTRON TRANSFER; EXCITATION; EXCITED STATES; F STATES; GLASS; LUMINESCENCE; QUENCHING; SENSITIVITY; SULFUR IONS; TEMPERATURE DEPENDENCE; TERBIUM IONS
- Descriptors DEC
- CHARGED PARTICLES; EMISSION; ENERGY LEVELS; ENERGY-LEVEL TRANSITIONS; IONS; MATERIALS; PHOTON EMISSION
Optional Information
- Copyright
- Copyright (c) 2020 Elsevier B.V. All rights reserved.