Published May 1980
| Version v1
Journal article
Dependence of indium antimonide inhomogeneity on the level of doping
- 1. Gosudarstvennyj Nauchno-Issledovatel'skij i Proektnyj Inst. Redkometallicheskoj Promyshlennosti, Moscow (USSR)
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Зависимост' неоднородности антимонида индия от уровня легирования
Publishing Information
- Journal Title
- Fiz. Tekh. Poluprovodn.
- Journal Volume
- 14
- Journal Issue
- 5
- Series
- Fiz. Tekh. Poluprovodn.
- Journal Page Range
- 981-984
- ISSN
- 0015-3222
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 12574332
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ANTIMONIDES; CARRIER DENSITY; CARRIER MOBILITY; ELECTRIC CONDUCTIVITY; GERMANIUM ADDITIONS; INDIUM COMPOUNDS; LOW TEMPERATURE; MONOCRYSTALS; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; QUANTITY RATIO; VARIATIONS
- Descriptors DEC
- ANTIMONY COMPOUNDS; CRYSTALS; ELECTRICAL PROPERTIES; MOBILITY; PHYSICAL PROPERTIES; SEMICONDUCTOR MATERIALS
Optional Information
- Notes
- Short note; for English translation see the journal Soviet Physics - Semiconductors (USA).