Published September 2011
| Version v1
Journal article
Molecular beam epitaxy growth of PbSe on Si (211) using a ZnTe buffer layer
Creators
- 1. Microphysics Laboratory, Physics Department, University of Illinois at Chicago, Illinois 60607 and EPIR Technologies, Bolingbrook, Illinois 60440 (United States)
- 2. EPIR Technologies, Bolingbrook, Illinois 60440 (United States)
- 3. Microphysics Laboratory, Physics Department, University of Illinois at Chicago, Illinois 60607 (United States)
- 4. Microphysics Laboratory, Physics Department, University of Illinois at Chicago, Illinois 60607 and Physics Department and Quantum Functional Semiconductor Research Center, Dongguk University 3-26, Seoul 100-715 (Korea, Republic of)
Description
The authors report the results of successful growth of single crystalline PbSe on Si (211) substrates with ZnTe as a buffer layer by molecular beam epitaxy. Single crystalline PbSe with (511) orientation was achieved on ZnTe/Si (211), as evidenced by RHEED patterns indicative of 2 dimensional (2D) growth, x ray diffraction rocking curves with a full width at half maximum as low as 153 arc sec and mobility as large as 1.1x104cm2V-1s-1 at 77 K. Cross hatch patterns were found on the PbSe(511) surface in Nomarski filtered microscope images suggesting the presence of a surface thermal strain relaxation mechanism, which was confirmed by Fourier transformed high resolution transmission electron microscope images.
Additional details
Identifiers
- DOI
- 10.1116/1.3609786;
Publishing Information
- Journal Title
- Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films
- Journal Volume
- 29
- Journal Issue
- 5
- Journal Page Range
- p. 051503-051503.5
- ISSN
- 1553-1813
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44014079
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
- Descriptors DEI
- CRYSTAL GROWTH; ELECTRON DIFFRACTION; FOURIER TRANSFORM SPECTROMETERS; GRAIN ORIENTATION; LEAD SELENIDES; MOLECULAR BEAM EPITAXY; MONOCRYSTALS; SPATIAL RESOLUTION; STRESS RELAXATION; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION; ZINC TELLURIDES
- Descriptors DEC
- CHALCOGENIDES; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; CRYSTALS; DIFFRACTION; ELECTRON MICROSCOPY; EPITAXY; LEAD COMPOUNDS; MEASURING INSTRUMENTS; MICROSCOPY; MICROSTRUCTURE; ORIENTATION; RELAXATION; RESOLUTION; SCATTERING; SELENIDES; SELENIUM COMPOUNDS; SPECTROMETERS; TELLURIDES; TELLURIUM COMPOUNDS; ZINC COMPOUNDS
Optional Information
- Notes
- (c) 2011 American Vacuum Society