Published 1990 | Version v1
Miscellaneous Metadata-only

Electronic properties of He+ implanted anodic oxide films formed on titanium

Creators

Description

The electronic properties of He+ implanted anodic oxide films formed on titanium under galvanostatic control are investigated by photoelectrochemistry (PEC) at two different stages of the growth process. This technique shed in light differences in the implantation effects as a function of the final formation potential attained: He+ implantation modifies markedly the electronic structure of thin films obtained at low formation potential (Vmax=20V/SCE), but exert no significant influence on thick films grown at high formation potential (Vmax=100V/SCE). In both cases, a doping effect due to He+ implantation in revealed. 8 refs.; 3 figs

Additional details

Additional titles

Original title (no language)
Radiatsionnoe materialovedenie. Tom 2.

Publishing Information

Imprint Title
Radiation materials science. V. 2
Imprint Pagination
251 p.
Journal Page Range
p. 70-79.
Report number
INIS-SU--273/A

Conference

Title
International conference on radiation materials science.
Dates
22-25 May 1990.
Place
Alushta (USSR).

INIS

Country of Publication
USSR
Country of Input or Organization
USSR
INIS RN
22075915
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
AGING; ANODIZATION; ELECTRIC POTENTIAL; ELECTRONIC STRUCTURE; HELIUM IONS; ION IMPLANTATION; KEV RANGE 100-1000; MICROSTRUCTURE; PROTECTIVE COATINGS; RADIATION EFFECTS; SIMULATION; TITANIUM; TITANIUM OXIDES
Descriptors DEC
CHALCOGENIDES; CHARGED PARTICLES; CHEMICAL COATING; COATINGS; CORROSION PROTECTION; CRYSTAL STRUCTURE; DEPOSITION; ELECTROCHEMICAL COATING; ELECTROLYSIS; ELEMENTS; ENERGY RANGE; IONS; KEV RANGE; METALS; OXIDES; OXYGEN COMPOUNDS; SURFACE COATING; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS

Optional Information

Notes
Imprint:Radiatsionnoe materialovedenie. Tom 2.