Growth of low density InP/GaInP quantum dots

We demonstrate low density InP quantum dot growth by metalorganic vapour phase epitaxy on (100) GaAs substrates with a 3 0 misorientation towards (111). Using micro-photoluminescence characterisation, we identify the transitional region from single to bimodal quantum dot size distributions where InP deposition thicknesses, over a range of ∼ 1.1 A, provide a region of spatially and spectrally isolated quantum dots suitable for single dot studies.