Neutralization of positively charged excitonic state in single InAs quantum dot by Si delta doping

Positively charged excitonic state in single InAs quantum dot (QD) has been neutralized by Si delta doping and the optical properties of the fabricated samples are characterized by micro-photoluminescence measurements (μ-PL) at low temperature. An InAs QD sample having dominant emissions from positively charged excitonic states is prepared for a reference. By optimizing Si delta doping conditions, positively charged QDs are neutralized successfully and distinctive emissions from neutral exciton and biexciton from single QDs are achieved. For excessive doping condition, μ-PL spectra show optical degradation of lowering of peak intensity and broadening of peak width as doping concentration increases.