Published February 19, 2010
| Version v1
Journal article
The thresholds of surface nano-/micro-morphology modifications with femtosecond laser pulse irradiations
- 1. Department of Physics and Applied Physics, and Nanomanufacturing Center, University of Massachusetts Lowell, One University Avenue, Lowell, MA 01854 (United States)
- 2. Department of Physics, Harvard University, Cambridge, MA 02138 (United States)
Description
We studied the pulse energy threshold of surface nano-/micro-morphology modifications by irradiating Si, GaAs, GaP, InP, Cu and Ti surfaces with 100 fs laser pulses at a wavelength of 800 nm in air and in water. We found that the laser pulse energy thresholds required for the permanent modification in water are up to 30% lower than those in air. Different non-equilibrium dynamics processes of the surface melting layer cause the different thresholds in water and in air.
Availability note (English)
Available from http://dx.doi.org/10.1088/0957-4484/21/7/075304Additional details
Identifiers
- DOI
- 10.1088/0957-4484/21/7/075304;
- PII
- S0957-4484(10)39287-7;
Publishing Information
- Journal Title
- Nanotechnology (Print)
- Journal Volume
- 21
- Journal Issue
- 7
- Journal Page Range
- [5 p.]
- ISSN
- 0957-4484
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43022231
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- AIR; GALLIUM ARSENIDES; GALLIUM PHOSPHIDES; INDIUM PHOSPHIDES; LASERS; LAYERS; MODIFICATIONS; MORPHOLOGY; NANOSTRUCTURES; PULSED IRRADIATION; PULSES; SURFACES; WATER
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; FLUIDS; GALLIUM COMPOUNDS; GASES; HYDROGEN COMPOUNDS; INDIUM COMPOUNDS; IRRADIATION; OXYGEN COMPOUNDS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES