Published June 1, 2009
| Version v1
Journal article
Reliability of AlGaInP light emitting diodes with an ITO current spreading layer
- 1. Beijing Optoelectronics Technology Laboratory, Beijing University of Technology, Beijing 100124 (China)
Description
Three aging experiments were performed for AlGaInP light emitting diodes (LED) with or without indium tin oxide (ITO), which is used as a current spreading layer. It was found that the voltage of the LED with an ITO film increased at a high current stressing, while there was little change for that of the LED without the ITO. The results of the LEDs with different thicknesses of the ITO film show that the LED with a thicker ITO has a higher reliability. The main reason for the voltage increase of the LED with the ITO film might be the current crowding in the ITO film around the P-type electrode.
Availability note (English)
Available from http://dx.doi.org/10.1088/1674-4926/30/6/064004Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Semiconductors
- Journal Volume
- 30
- Journal Issue
- 6
- Journal Page Range
- [3 p.]
- ISSN
- 1674-4926
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41079151
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- AGING; ALUMINIUM COMPOUNDS; ELECTRIC POTENTIAL; ELECTRODES; FILMS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; INDIUM OXIDES; LAYERS; LIGHT EMITTING DIODES; PHOSPHIDES; RELIABILITY; TIN OXIDES
- Descriptors DEC
- CHALCOGENIDES; INDIUM COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PHOSPHORUS COMPOUNDS; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; TIN COMPOUNDS