Published March 1987
| Version v1
Journal article
Accumulation of radiation-induced defects in silicon epitaxial layers under irradiation and annealing
Creators
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Накопление радиационных дефектов в эпитаксиальных слоях кремния при облучении и отжиге
Publishing Information
- Journal Title
- Izv. Vyssh. Uchebn. Zaved., Fiz.
- Journal Volume
- 30
- Journal Issue
- 3
- Series
- Izv. Vyssh. Uchebn. Zaved., Fiz.
- Journal Page Range
- 127
- ISSN
- 0021-3411
- CODEN
- IVUFA
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 18091724
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ANNEALING; CARBON; CRYSTAL DEFECTS; EPITAXY; GAMMA RADIATION; IMPURITIES; LAYERS; N-TYPE CONDUCTORS; OXYGEN; PHYSICAL RADIATION EFFECTS; SILICON; TEMPERATURE DEPENDENCE; THICKNESS
- Descriptors DEC
- CRYSTAL STRUCTURE; DIMENSIONS; ELECTROMAGNETIC RADIATION; ELEMENTS; HEAT TREATMENTS; IONIZING RADIATIONS; MATERIALS; NONMETALS; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR MATERIALS; SEMIMETALS
Optional Information
- Notes
- Short note. For English translation see the journal Soviet Physics Journal (USA).