Published May 14, 1994
| Version v1
Journal article
A structural study of polycrystalline AlN films prepared by ion-beam-assisted deposition
- 1. Tsinghua Univ., Beijing, BJ (China). Dept. of Materials Science and Engineering
- 2. China Association for Science and Technology, Beijing, BJ (China)
Description
Aluminium nitride films were synthesized by electron gun evaporation of aluminium on Si(111) wafer and glassy carbon, with simultaneous bombardment of 5-20 keV nitrogen ions. The resultant films were characterized by X-ray photoelectron spectroscopy, X-ray diffraction and Rutherford backscattering spectrometry. Under specific experimental condition, polycrystalline AlN films, with a hexagonal structure of fine crystallinity, were obtained. The correlation between experimental parameters and the resulting structure as well as the stoichiometry of AlN films is also discussed. (Author)
Additional details
Publishing Information
- Journal Title
- Journal of Physics. D, Applied Physics
- Journal Volume
- 27
- Journal Issue
- 5
- Journal Page Range
- p. 1056-1059.
- ISSN
- 0022-3727
- CODEN
- JPAPBE
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 25054267
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- ALUMINIUM NITRIDES; BACKSCATTERING; CARBON; DEPOSITION; ELECTRON GUNS; EVAPORATION; EXPERIMENTAL DATA; ION COLLISIONS; IONIZATION; KEV RANGE 10-100; NITROGEN 14 BEAMS; POLYCRYSTALS; RUTHERFORD SCATTERING; SILICON; STOICHIOMETRY; THIN FILMS; X-RAY DIFFRACTION; X-RAY SPECTROSCOPY
- Descriptors DEC
- ALUMINIUM COMPOUNDS; BEAMS; COHERENT SCATTERING; COLLISIONS; CRYSTALS; DATA; DIFFRACTION; ELASTIC SCATTERING; ELEMENTS; ENERGY RANGE; FILMS; INFORMATION; ION BEAMS; KEV RANGE; NITRIDES; NITROGEN COMPOUNDS; NONMETALS; NUMERICAL DATA; PHASE TRANSFORMATIONS; PNICTIDES; SCATTERING; SEMIMETALS; SPECTROSCOPY