Kinetics of point defects and processes of amorphous state rendering in thin films under irradiation

Theoretical model for describing the evolution of point defects ensemble (vacancies and internodal atoms) and its effect on processes of the solid phase amorphization in the irradiated crystalline thin films is suggested. Equations of point defects kinetics in the irradiated thin films in case of the absence of ion implantation are proposed. Calculation of temperature dependence of the amorphization start dose which is compared with the corresponding experimental data, is carried out by means of numerical solution of given kinetic equation