Published April 10, 1989
| Version v1
Journal article
Satellites to Δn = 1 transitions between high-lying levels of multiply ionized atoms
Creators
- 1. Institut fur Experimentalphysik V, Ruhr-Universitat, 4630 Bochum, Federal Republic of Germany (Germany, F.R.)
Description
In a θ pinch discharge satellites to Δn=1 transitions between high-lying levels are observed for the ions Si ix, Si x, and Si xi, but not for Si xii. They are identified as Δn=1 transitions between the corresponding levels of doubly excited systems. At high densities, the series of Rydberg levels above their respective thermal limit are collisionally coupled to their ionization limit: The intensity ratio of a transition to that of its satellite thus offers the unique possibility of measuring the ratio of the population density in the ground energy level of the next ionization stage to that in the lowest excited levels of this ion
Additional details
Publishing Information
- Journal Title
- Physical Review Letters
- Journal Volume
- 62
- Journal Issue
- 15
- Series
- Phys. Rev. Lett.
- Journal Page Range
- 1750-1752
- ISSN
- 0031-9007
- CODEN
- PRLTA
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 20081974
- Subject category
- S70: PLASMA PHYSICS AND FUSION TECHNOLOGY;
- Descriptors DEI
- ATOMS; COLLISIONAL PLASMA; ELECTRIC DISCHARGES; ENERGY-LEVEL TRANSITIONS; EXCITED STATES; GROUND STATES; IMPURITIES; RYDBERG STATES; SILICON IONS; THETA PINCH
- Descriptors DEC
- ATOMIC IONS; CHARGED PARTICLES; ENERGY LEVELS; IONS; PINCH EFFECT; PLASMA