Published April 10, 1989 | Version v1
Journal article

Satellites to Δn = 1 transitions between high-lying levels of multiply ionized atoms

  • 1. Institut fur Experimentalphysik V, Ruhr-Universitat, 4630 Bochum, Federal Republic of Germany (Germany, F.R.)

Description

In a θ pinch discharge satellites to Δn=1 transitions between high-lying levels are observed for the ions Si ix, Si x, and Si xi, but not for Si xii. They are identified as Δn=1 transitions between the corresponding levels of doubly excited systems. At high densities, the series of Rydberg levels above their respective thermal limit are collisionally coupled to their ionization limit: The intensity ratio of a transition to that of its satellite thus offers the unique possibility of measuring the ratio of the population density in the ground energy level of the next ionization stage to that in the lowest excited levels of this ion

Additional details

Publishing Information

Journal Title
Physical Review Letters
Journal Volume
62
Journal Issue
15
Series
Phys. Rev. Lett.
Journal Page Range
1750-1752
ISSN
0031-9007
CODEN
PRLTA

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
20081974
Subject category
S70: PLASMA PHYSICS AND FUSION TECHNOLOGY;
Descriptors DEI
ATOMS; COLLISIONAL PLASMA; ELECTRIC DISCHARGES; ENERGY-LEVEL TRANSITIONS; EXCITED STATES; GROUND STATES; IMPURITIES; RYDBERG STATES; SILICON IONS; THETA PINCH
Descriptors DEC
ATOMIC IONS; CHARGED PARTICLES; ENERGY LEVELS; IONS; PINCH EFFECT; PLASMA