Cold deposition of large-area amorphous hydrogenated silicon films by dielectric barrier discharge chemical vapor deposition

Amorphous hydrogenated silicon films were deposited on glass substrates at room temperature. This cold deposition process was operated in a dielectric barrier discharge CVD reactor with a fixed strip-shaped plasma matched with a moving substrate holder. The maximum film area was 300 x 600 mm2. The film deposition rate as a function of applied peak voltage of DBD power was investigated under different hydrogen-diluted silane concentrations, and the film surface smoothness, continuity, and film/glass adherence were also studied. The maximum deposition rate was 12.2 A/s, which was performed under the applied peak voltage of 16 kV and a hydrogen-diluted silane concentration of 50%. IR measurements reveal that the silane concentration plays a key role in determining the hydrogen-silicon bonding configurations. With increasing hydrogen-diluted silane concentration, the H-Si bonding configurations shift gradually from Si-H3 to Si-H. The variation of photo/dark conductivity ratio and optical bandgap versus hydrogen-diluted silane concentration were investigated. The use of DBD-CVD for deposition of a-Si:H films offers certain advantages, such as colder substrate, faster film growth rate, and larger deposition area. However, the consumption of silane for the DBD-PECVD procedure is much greater than for the RF-PECVD process.