Published 1989 | Version v1
Report

Heavy ion channeling in crystals

  • 1. Lyon-1 Univ., 69 - Villeurbanne (France). Inst. de Physique Nucleaire
  • 2. Bordeaux-1 Univ., 33 - Gradignan (France). Centre d'Etudes Nucleaires
  • 3. Grand Accelerateur National d'Ions Lourds (GANIL), 14 - Caen (France)
  • 4. Ecole Normale Superieure 75 - Paris (France)
  • 5. Centre Interdisciplinaire de Recherches avec les Ions Lourds, 14 - Caen (France)
  • 6. Strasbourg-1 Univ., 67 (France). Centre de Recherches Nucleaires
  • 7. Ecole Polytechnique, 91 - Palaiseau (France)
  • 8. Pontifica Univ. Catolica de Rio de Janeiro, RJ (Brazil). Dept de Fisica

Description

The results of two experimental investigations in which the channeling effects on electron loss and capture appear successively are discussed. The experiments were performed with a 27 MeV xenon beam at Ganil facility. The x-ray spectrum emitted by a Si crystal is obtained. The charge and the energy of the transmitted ions was analyzed. The charge state distributions of Xe ions transmitted through the Si crystal in random conditions and for < 100 > axial alignment are shown. The angular dependence of Ly α yield is illustrated. The electron density map in a Si crystal is given

Part of:
Swift Heavy Ions in Matter

Additional details

Publishing Information

Imprint Title
Swift Heavy Ions in Matter
Imprint Pagination
262 p.
Journal Page Range
p. 73-77.
Report number
SHIM--89

Conference

Title
1. International Symposium on swift heavy ions in matter.
Dates
16-19 May 1989.
Place
Caen (France).

Optional Information