W/SiC x-ray multilayers optimized for use above 100 keV
Creators
- 1. Columbia Astrophysics Laboratory, 550 West 120 Street, New York, New York 10027 (United States)
- 2. European Synchrotron Radiation Facility, Grenoble (France)
- 3. Danish Space Research Institute, 30 Juliane Maries Vej, 2100 Copenhagen (Denmark)
- 4. California Institute of Technology, Pasadena, California 91125 (United States)
- 5. Lawrence Livermore National Laboratory, Livermore, California 94550 (United States)
Description
We have developed a new depth-graded multilayer system comprising W and SiC layers, suitable for use as hard x-ray reflective coatings operating in the energy range 100-200 keV. Grazing-incidence x-ray reflectance at E = 8 keV was used to characterize the interface widths, as well as the temporal and thermal stability in both periodic and depth-graded W/SiC structures, whereas synchrotron radiation was used to measure the hard x-ray reflectance of a depth-graded multilayer designed specifically for use in the range E∼150-170 keV. We have modeled the hard x-ray reflectance using newly derived optical constants, which we determined from reflectance versus incidence angle measurements also made using synchrotron radiation, in the range E = 120-180 keV. We describe our experimental investigation in detail, compare the new W/SiC multilayers with both W/Si and W/B4C films that have been studied previously, and discuss the significance of these results with regard to the eventual development of a hard x-ray nuclear line telescope
Additional details
Publishing Information
- Journal Title
- Applied Optics
- Journal Volume
- 42
- Journal Issue
- 13
- Journal Page Range
- p. 2415-2421
- ISSN
- 0003-6935
- CODEN
- APOPAI
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 35055317
- Subject category
- S36: MATERIALS SCIENCE; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- ANGULAR DISTRIBUTION; LAYERS; MIRRORS; OPTICAL PROPERTIES; OPTICS; REFLECTIVITY; SILICON CARBIDES; TUNGSTEN; X RADIATION
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; DISTRIBUTION; ELECTROMAGNETIC RADIATION; ELEMENTS; IONIZING RADIATIONS; METALS; OPTICAL PROPERTIES; PHYSICAL PROPERTIES; RADIATIONS; REFRACTORY METALS; SILICON COMPOUNDS; SURFACE PROPERTIES; TRANSITION ELEMENTS
Optional Information
- Notes
- (c) 2003 Optical Society of America