Published 2002 | Version v1
Miscellaneous

Using field effect radiosensitive transistor RADFET in radiation monitoring and dosimetry

Creators

  • 1. Al-Assad Academy for Military Engineering, Aleppo (Syrian Arab Republic)

Description

Radiosensitive field effect transistors metal-oxide-semiconductor (RADFET) with linear response to radiation can be used in total radiation doses measurement and radiation monitoring with high accuracy. Radiation dosimetry principles using RADFET and its characteristics, mechanisms and applications have been clarified

Part of:
Proceedings of the 40. Science week of the Supreme Council of Sciences

Additional details

Publishing Information

Publisher
Supreme Council of Sciences
Imprint Place
Damascus (Syrian Arab Republic)
Imprint Title
Proceedings of the 40. Science week of the Supreme Council of Sciences
Imprint Pagination
[vp.]
Journal Page Range
p. 573-581, Book.2, Pt.2

Conference

Title
40. Science week of the Supreme Council of Sciences
Dates
4-9 Nov 2000
Place
Latakia (Syrian Arab Republic)

INIS

Country of Publication
Syrian Arab Republic
Country of Input or Organization
Syrian Arab Republic
INIS RN
34054798
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Conference, Non-conventional Literature
Descriptors DEI
DOSEMETERS; DOSIMETRY; FIELD EFFECT TRANSISTORS; RADIATION DOSES; RADIATION MONITORING
Descriptors DEC
DOSES; MEASURING INSTRUMENTS; MONITORING; SEMICONDUCTOR DEVICES; TRANSISTORS

Optional Information

Notes
3 refs., 5 figs.