Published April 1, 2019 | Version v1
Journal article

Preparation and photoelectric properties of cadmium sulfide quantum dots

  • 1. School of Materials Science and Engineering, Yunnan University, Kunming 650091 (China)
  • 2. Kunming Institute of Physics, Kunming 650223 (China)
  • 3. College of Engineering, Swansea University, Bay Campus, Fabian Way, Swansea SA1 8EN (United Kingdom)
  • 4. Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong (China)

Description

Cadmium sulfide quantum dots (CdS QDs) are widely used in solar cells, light emitting diodes, photocatalysis, and biological imaging because of their unique optical and electrical properties. However, there are some drawbacks in existing preparation techniques for CdS QDs, such as protection of inert gas, lengthy reaction time, high reaction temperature, poor crystallinity, and non-uniform particle size distribution. In this study, we prepared CdS QDs by liquid phase synthesis under ambient room temperature and atmospheric pressure using sodium alkyl sulfonate, CdCl2, and Na2S as capping agent, cadmium, and sulfur sources respectively. This technique offers facile preparation, efficient reaction, low-cost, and controllable particle size. The as-prepared CdS QDs exhibited good crystallinity, excellent monodispersity, and uniform particle size. The responsivity of CdS QDs-based photodetector is greater than 0.3 μ A / W , which makes them suitable for use as ultra-violet (UV) detectors. (special topic)

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-1056/28/4/047803

Additional details

Publishing Information

Journal Title
Chinese Physics. B
Journal Volume
28
Journal Issue
4
Journal Page Range
[6 p.]
ISSN
1674-1056