Published 2015 | Version v1
Miscellaneous Metadata-only

Effect of parameters of ion implantation on interface disordering in silicon-on-sapphire films

Creators

  • 1. NIIYaF MGU, Moscow (Russian Federation)
  • 2. Fizicheskij Fakul'tet MGU, Moscow (Russian Federation)

Description

no abstract available

Part of:
Summaries of reports of XLV International Tulinov conference on physics of interactions of charged particles with crystals

Additional details

Additional titles

Original title (Russian)
Влияние параметров ионной имплантации на разупорядочение границы раздела в пленках кремния на сапфире

Publishing Information

Publisher
Universitetskaya kniga
Imprint Place
Moscow (Russian Federation)
Imprint Title
Summaries of reports of XLV International Tulinov conference on physics of interactions of charged particles with crystals
Imprint Pagination
190 p.
Journal Page Range
p. 131
Report number
INIS-RU--607

Conference

Title
45. International Tulinov conference on physics of interactions of charged particles with crystals
Original Conference Title
XLV mezhdunarodnaya Tulinovskaya konferentsiya po fizike vzaimodejstviya zaryazhennykh chastits s kristallami
Dates
26-28 May 2015
Place
Moscow (Russian Federation)

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
49086305
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
No Abstract, Conference
Descriptors DEI
CRYSTAL DEFECTS; EPITAXY; ION BEAMS; ION IMPLANTATION; RECRYSTALLIZATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SAPPHIRE; SILICON; THICKNESS; THIN FILMS
Descriptors DEC
BEAMS; CORUNDUM; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; DIMENSIONS; ELEMENTS; FILMS; MINERALS; OXIDE MINERALS; SEMIMETALS; SPECTROSCOPY

Optional Information

Notes
Imprint:Tezisy dokladov XLV mezhdunarodnoj Tulinovskoj konferentsii po fizike vzaimodejstviya zaryazhennykh chastits s kristallami