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Published February 2020 | Version v1
Journal article

Grain growth and tunable ferromagnetic resonance linewidth of low-temperature sintering NiCuZn gyromagnetic ferrites

  • 1. University of Electronic Science and Technology of China. State Key Laboratory of Electronic Thin Film and Integrated Devices (China)
  • 2. Chengdu University of Information Technology. College of Communication Engineering (College of Microelectronics) (China)

Description

NiCuZn (NCT) ferrites-based ceramics material have received significant attention for good gyromagnetic properties in recent years. Densification and ferromagnetic resonance linewidth play a critical role in modern system including circulators, phase shifters. However, there are still technological challenges associated with its application to achieve high-performance communication system. In this work, we have carried out a analysis of the influence of sintering temperature and time on the dependent structural, tunable gyromagnetic properties of NCZ ferrites. SEM results found that a direct consequence of varying the sintering temperature and time to be on the variation in the grain size, thus adjusting the ferromagnetic resonance linewidth of NCZ ferrites. We also found that sufficient grain growth is adversely affect ferromagnetic resonance linewidth. Finally, uniform and compact NCZ gyromagnetic ferrites were successfully synthesized at a low temperature (~ 880 °C for 3 h). The fine microstructure of NCZ ferrites sintered at 880 °C for 3 h also possessed excellent gyromagnetic properties (high 4πMs≈ 3400.29 Gauss, and low ΔH ≈ 158.39 Oe). It was indicated that this greatly low ferromagnetic resonance linewidth of NiCuZn ferrites can be utilized for new generation high-performance microwave devices.

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Publishing Information

Journal Title
Journal of Materials Science. Materials in Electronics
Journal Volume
31
Journal Issue
4
Journal Page Range
p. 2845-2853
ISSN
0957-4522
CODEN
JSMEEV

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Copyright (c) 2020 © Springer Science+Business Media, LLC, part of Springer Nature 2020