Diffusion growth of interstitial and vacancy dislocation loops in a supersaturated solution of point defects

The theory of diffusion growth of interstitial and vacancy dislocation loops has been developed for a crystal containing point defects. An expression for the dislocation loop growth rate has been obtained, taking into account elastic interaction between these loops and point defects. Expressions have been found for the critical radius of interstitial and vacancy dislocation loops as a function of interaction magnitude and effective supersaturation of point defects. (author)