Published February 1, 1981
| Version v1
Journal article
Optical oscillator strengths for silicon
Description
Optical oscillator strengths for excitations from the 3p valence subshell of silicon are calculated using a semi-empirical method. (orig.)
Additional details
Publishing Information
- Journal Title
- Opt. Commun.
- Journal Volume
- 36
- Journal Issue
- 3
- Series
- Opt. Commun.
- Journal Page Range
- 193-194
- ISSN
- 0030-4018
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 12625642
- Subject category
- S74: ATOMIC AND MOLECULAR PHYSICS;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- BORN APPROXIMATION; D STATES; EXCITATION; L-S COUPLING; OSCILLATOR STRENGTHS; P STATES; SCHROEDINGER EQUATION; SILICON; SINGLE-PARTICLE MODEL; THEORETICAL DATA
- Descriptors DEC
- COUPLING; DATA; DIFFERENTIAL EQUATIONS; ELEMENTS; ENERGY LEVELS; ENERGY-LEVEL TRANSITIONS; EQUATIONS; INFORMATION; INTERMEDIATE COUPLING; NUMERICAL DATA; SEMIMETALS